Products
TYSTC
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Today we operate with the most advanced equipment in a state-of-the art facility
dedicated to SiC film deposition. Based on customer-orientation, we provide product
solutions from high volume epi-wafers for large chip enterprises in overseas to single
wafer for universities, research Institutes & laboratories.
TYSiC offers SiC epitaxial wafers as well as epitaxial growth on substrates supplied
by customers. The grown layers can be fully characterized in-house. Flexible options are
available for further processing of the epi substrates.
Combined with N type doped: We can provide SiC epitaxial materials for namely:
unipolar SiC power devices: SBD (JBS, MPS) (Schottky Barrier Diode, PN junction composite
structure), MOSFET, JFET, SIT, and bipolar static induction transistor SiC power devices:
PIN diode, BJT, IGBT, GTO (Gate turn-off Thyristor), and Thyristor.
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