On June 4,company began to provide n-type and p-type epitaxial wafer.

    Combined with N type doped: We can provide SiC epitaxial materials such as unipolar SiC power devices: SBD (JBS, MPS) (Schottky Barrier Diode, pn junction composite structure), MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), JFET(Junction Field-effect Transistor), SIT, (Static Induction Transistor)   and bipolar static induction transistor SiC power devices: PIN (PIN diode), BJT (Bipolar Junction Transistor), IGBT (Insulated Gate Bipolar Transistor), GTO (Gate turn-off Thyristor), Thyristor (semiconductor thyratron).