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SiC epitaxial wafer

TYSiC can Provide 4-inch and 6-inch epitaxial wafers for fabrications of power devices including SBD JBS PiN MOSFET JFET BJT GTO & IGBT from 600V up to 3300V.

Product introduction

SiC epitaxial wafer 



TYSiC can Provide 4-inch and 6-inch epitaxial wafers for fabrications of power devices including SBD, JBS, PiN, MOSFET, JFET, BJT, GTO & IGBT from 600V up to 3300V.

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Download:

Specification of TYSiC 2021-150mm-Hi Grade.pdf


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